Spin transport in benzofurane bithiophene based organic spin valves

Journal Article · Wed Jan 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4862675· OSTI ID:22251675

Palosse, Mathieu; Séguy, Isabelle; Bedel-Pereira, Élena ^[1]; LAAS, ^[2]; CEMES, F-31077 Toulouse ^[2]; Villeneuve-Faure, Christina ^[3]; LAAS, ^[2]; CEMES, F-31077 Toulouse ^[2]; Mallet, Charlotte; Frère, Pierre ^[4]; Warot-Fonrose, Bénédicte; Biziere, Nicolas ^[3]; LAAS, ^[2]; CEMES, F-31077 Toulouse ^[2]; Bobo, Jean-François ^[3]; LAAS, ^[2]; CEMES, F-31077 Toulouse ^[2]

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1. CNRS, LAAS, 7 avenue du Colonel Roche, F-31400 Toulouse (France)
2. France
3. Université de Toulouse (France)
4. MOLTECH-Anjou, UMR CNRS 6200, Université d’Angers, 2 Bd Lavoisier 49045 ANGERS Cedex (France)

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO{sub x} buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO{sub x} buffer layer.

• OSTI ID: 22251675
• Journal Information: AIP Advances, Vol. 4, Issue 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONTAMINATION
ELECTRODES
HYSTERESIS
LAYERS
MAGNETORESISTANCE
OXYGEN
SPIN