Resistive switching properties of Ce and Mn co-doped BiFeO{sub 3} thin films for nonvolatile memory application

Journal Article · Sat Dec 14 23:00:00 EST 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4860950· OSTI ID:22250877

Tang, Zhenhua; Zeng, Jia; Tang, Minghua; Xu, Dinglin; Cheng, Chuanpin; Xiao, Yongguang; Zhou, Yichun ^[1]; Xiong, Ying ^[2]

---

1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan, 411105 (China)
2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)

The Ce and Mn co-doped BiFeO{sub 3} (BCFMO) thin films were synthesized on Pt/Ti/SiO{sub 2}/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large R{sub OFF}/R{sub ON} ratio (>80), long retention time (>10{sup 5} s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.

• OSTI ID: 22250877
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 3; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
EMISSION
EQUIPMENT
LEAKAGE CURRENT
SILICON OXIDES
SOL-GEL PROCESS
SPACE CHARGE
SUBSTRATES
THIN FILMS