Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices
- Department of Electrical Engineering, National Tsing Hua University, 101 Kuang Fu Road, Section 2, Hsinchu, Taiwan 30013 (China)
Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.
- OSTI ID:
- 22224152
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 5; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
Similar Records
Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures
Epitaxial III-V semiconductors for integrated electro-optics. Final report, 1 August 1986-30 April 1988