Terahertz quantum cascade lasers based on quaternary AlInGaAs barriers

Journal Article · Mon Jul 22 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4816352· OSTI ID:22218298

Ohtani, K.; Beck, M.; Scalari, G.; Faist, J. ^[1]

---

1. Institute for Quantum Electronics, ETH Zurich, Zurich 8093 (Switzerland)

Terahertz quantum cascade lasers incorporating lattice-matched quaternary AlInGaAs barriers grown by molecular beam epitaxy on InP substrate are reported. Four quantum well active region devices exhibited lasing at 3.8 THz with threshold current densities as low as 74 A/cm{sup 2} at 10 K. From optical characterization and a doping study of the active region, an upper state lifetime of 8 ps, as well as a long transport time across the active region of 68 ps and a ratio of free carrier loss to gain cross sections of 4.6%, is reported. A maximum operating temperature of 130 K was achieved for a device with a conduction band discontinuity of 0.14 eV.

• OSTI ID: 22218298
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
CURRENT DENSITY
DENSITY
DIFFUSION BARRIERS
EQUIPMENT
EV RANGE
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
LANTHANUM SELENIDES
LASERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THRESHOLD CURRENT