The formation mechanisms and optical characteristics of GaSb quantum rings

Journal Article · Wed Aug 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4817419· OSTI ID:22218245

Lin, Wei-Hsun; Pao, Chun-Wei ^[1]; Wang, Kai-Wei ^[2]; Liao, Yu-An ^[3]; Lin, Shih-Yen ^[1]

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1. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)
2. College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China)
3. Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures.

• OSTI ID: 22218245
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 5; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
GALLIUM ANTIMONIDES
LAYERS
MIXTURES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SURFACES