Optimizing TaO{sub x} memristor performance and consistency within the reactive sputtering “forbidden region”
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Standard deposition processes for depositing ReRAM oxides utilize mass flow of reactive gas to control stoichiometry and have difficulty depositing a precisely defined sub-stoichiometry within a “forbidden region” where film properties are discontinuous with mass flow. We show that by maintaining partial pressure within this discontinuous “forbidden region,” instead of by maintaining mass flow, we can optimize tantalum oxide device properties and reduce or eliminate the electroforming step. We also show that defining the partial pressure set point as a fraction of the “forbidden region” instead of as an absolute value can be used to improve wafer-to-wafer consistency with minimal recalibration efforts.
- OSTI ID:
- 22218217
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 103; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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