64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

Journal Article · Mon Aug 05 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4817797· OSTI ID:22218210

Dietz, Roman J. B.; Globisch, Björn; Stanze, Dennis; Roehle, Helmut; Göbel, Thorsten; Schell, Martin ^[1]; Gerhard, Marina; Velauthapillai, Ajanthkrishna; Koch, Martin ^[2]

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1. Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin (Germany)
2. Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 μW corresponding to an optical power-to-THz power conversion efficiency of up to 2 × 10{sup −3}.

• OSTI ID: 22218210
• Journal Information: Applied Physics Letters, Vol. 103, Issue 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTENNAS
EFFICIENCY
EMISSION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
MOBILITY
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PULSES
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROMETERS
TRAPPING