Minority anion substitution by Ni in ZnO

Journal Article · Mon Aug 26 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4820254· OSTI ID:22218143

Pereira, L. M. C.; Amorim, L. M.; Decoster, S.; Temst, K.; Vantomme, A. ^[1]; Wahl, U.; Correia, J. G. ^[2]; Silva, D. J. ^[3]; Bosne, E. ^[2]; Silva, M. R. da ^[4]

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1. Instituut voor Kern-en Stralingsfysica, KU Leuven, 3001 Leuven (Belgium)
2. Campus Tecnológico e Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém (Portugal)
3. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto (Portugal)
4. Centro de Física Nuclear da Universidade de Lisboa, 1649-003 Lisboa (Portugal)

We report on the lattice location of implanted Ni in ZnO using the β{sup −} emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors.

• OSTI ID: 22218143
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANIONS
ATOMS
CATIONS
CHANNELING
DOPED MATERIALS
EMISSION
ION IMPLANTATION
MAGNETIC SEMICONDUCTORS
NICKEL
POTENTIALS
ZINC OXIDES