Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy
- I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)
- Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 58, 35392 Gießen (Germany)
- Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain)
Germanium doping of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) substrates is studied. Time of flight secondary ion mass spectrometry measurements reveal a constant Ge-concentration along the growth axis. A linear relationship between the applied Ge-flux and the resulting ensemble Ge-concentration with a maximum content of 3.3×10{sup 20} cm{sup −3} is extracted from energy dispersive X-ray spectroscopy measurements and confirmed by a systematic increase of the conductivity with Ge-concentration in single nanowire measurements. Photoluminescence analysis of nanowire ensembles and single nanowires reveals an exciton localization energy of 9.5 meV at the neutral Ge-donor. A Ge-related emission band at energies above 3.475 eV is found that is assigned to a Burstein-Moss shift of the excitonic emission.
- OSTI ID:
- 22218059
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy
Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy