Work function engineering of single layer graphene by irradiation-induced defects

Journal Article · Mon Oct 21 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4826642· OSTI ID:22217892

Kim, Jong-Hun; Hwang, Jin Heui; Kwon, Sangku; Young Park, Jeong ^[1]; Suh, Joonki; Tongay, Sefaattin ^[2]; Hwang, C. C. ^[3]; Wu, Junqiao ^[2]

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1. Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, and Graduate School of EEWS, KAIST, 373-1 Guseong Dong, Daejeon 305-701 (Korea, Republic of)
2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States)
3. Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

We report the tuning of electrical properties of single layer graphene by α-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.

• OSTI ID: 22217892
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
BEAMS
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
ENGINEERS
GRAPHENE
IRRADIATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SURFACE POTENTIAL
WORK FUNCTIONS
X-RAY PHOTOELECTRON SPECTROSCOPY