ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer
Journal Article
·
· Materials Research Bulletin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou (China)
- Center for Photovoltaics and Solar Energy, Shen Zhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shen Zhen (China)
Highlights: ► High quality ZnO film with ultra-low background electron concentration is grown by plasma-assisted molecular beam epitaxy using Mg film as a buffer layer. ► High resolution X-ray diffraction and photoluminescence (PL) spectroscopy indicate a high degree of crystallization. ► Hall measurement shows a carrier concentration as low as ∼10{sup 14} cm{sup −3}. ► The mechanism of the improved crystallinity is discussed in detail. -- Abstract: High quality ZnO epilayer with background electron concentration as low as 2.6 × 10{sup 14} cm{sup −3} was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.029°. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal–semiconductor–metal (MSM) typed photodetector based on the material demonstrates a response of ∼43 A/W under the bias of 1 V and an ON/OFF ratio of 10{sup 4}. This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping.
- OSTI ID:
- 22215760
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 9 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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