The growth of benzophenone crystals by Sankaranarayanan-Ramasamy (SR) method and slow evaporation solution technique (SEST): A comparative investigation
- Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110, Tamilnadu (India)
- Materials Characterization Division, National Physical Laboratory, New Delhi 110 012 (India)
Highlights: Black-Right-Pointing-Pointer Benzophenone single crystal was grown by Sankaranarayanan-Ramasamy method which has the sizes of 1060 mm length and 55 mm diameter for the first time. Black-Right-Pointing-Pointer The conventional and SR-grown benzophenone crystals were characterized and compared using HRXRD, etching, laser damage threshold, microhardness, UV-transmittance, birefringence and dielectric analysis. Black-Right-Pointing-Pointer The SR-grown benzophenone crystal has higher LDT, microhardness, transparency, dielectric permittivity, birefringence and lower FWHM, EPD, dielectric loss than the crystal grown by conventional method. Black-Right-Pointing-Pointer The probable reason for higher crystalline perfection in SR-grown crystal was discussed. -- Abstract: Longest unidirectional Left-Pointing-Angle-Bracket 1 0 0 Right-Pointing-Angle-Bracket benzophenone (BP) crystal having dimension of 1060 mm length and 55 mm diameter was grown by Sankaranarayanan-Ramasamy method. The growth rate was measured by monitoring the elevation of the crystal-solution interface at different temperatures. The high resolution X-ray diffraction and etching measurements indicate that the unidirectional grown benzophenone crystal has good crystalline perfection and less density of defects. The optical damage threshold of SEST and SR grown BP crystals has been investigated and found that the SR grown benzophenone crystal has higher laser damage threshold value than the conventional method grown crystal. Microhardness measurement shows that crystals grown by SR method have a higher mechanical stability than the crystals grown by SEST method. Dielectric permittivity and birefringence are high in SR grown crystal compared to SEST grown BP crystal. The UV-vis-NIR results show that SR method grown crystal exhibits 7% higher transmittance as against crystals grown by conventional method.
- OSTI ID:
- 22212475
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synthesis, crystal growth and characterization of nonlinear optical organic crystal: p-Toluidinium p-toluenesulphonate
Bulk growth of <001> organic nonlinear optical (NLO) L-arginine 4-nitrophenolate 4-nitrophenol dihydrate (LAPP) single crystals by SR method