Electrical properties and thermal expansion of cobalt doped apatite-type lanthanum silicates based electrolytes for IT-SOFC
- College of Materials Science and Engineering, Nanjing University of Technology, No.5 Xinmofan Road, Nanjing, Jiangsu (China)
Graphical abstract: The figure shows the dependence of conductivity on the Co content. It can be seen that La{sub 10}Si{sub 5.2}Co{sub 0.8}O{sub 26.6} exhibits the highest ionic conductivity of 3.33 Multiplication-Sign 10{sup -2} S/cm at 800 Degree-Sign C. When x {<=} 0.8, as doping Co weakens the binding energy and aids the migration of the interstitial oxide ions, the ionic conductivity improves. On the other hand, excess dopant of Co (0.8 < x {<=} 1.5) can decrease the number of interstitial oxide ions and reduce the ionic conductivity. Highlights: Black-Right-Pointing-Pointer The unit volumes of La{sub 10}Si{sub 6-x}Co{sub x}O{sub 27-x/2} increase with increasing cobalt content. Black-Right-Pointing-Pointer Doping Co can increase the thermal expansion because of the larger radius of Co{sup 3+} ion. Black-Right-Pointing-Pointer Conductivities of La{sub 10}Si{sub 6-x}Co{sub x}O{sub 27-x/2} first increase and then decrease with cobalt content. Black-Right-Pointing-Pointer Above 550 Degree-Sign C, La{sub 10}Si{sub 6-x}Co{sub x}O{sub 27-x/2} shows low activation energies of around 0.7 eV. -- Abstract: The thermal expansion and conductivities have been investigated for Co{sup 3+} doped lanthanum silicates. The apatite-type lanthanum silicates with formula La{sub 10}Si{sub 6-x}Co{sub x}O{sub 27-x/2} (x = 0.2, 0.4, 0.6, 0.8, 1.0, 1.5) were synthesized by sol-gel process. The thermal expansion coefficient (TEC) of La{sub 10}Si{sub 6-x}Co{sub x}O{sub 27-x/2} was improved with increasing cobalt content because of the lower valence and larger radius of Co{sup 3+} ion compared to Si{sup 4+}. Analysis of AC impedance spectroscopy showed that conductivity increased first and then decreased with increasing cobalt content. There is an optimum doping amount of cobalt and La{sub 10}Si{sub 5.2}Co{sub 0.8}O{sub 26.6} exhibits the highest conductivity of 3.33 Multiplication-Sign 10{sup -2} S/cm at 800 Degree-Sign C. When x {<=} 0.8, the local distortion caused by doping with Co{sup 3+} can significantly affect the oxygen channels and assist the migration of the interstitial oxide ions, resulting in the improvement of ionic conductivity. However, excess Co{sup 3+} dopant (0.8 < x {<=} 1.5) reduced the number of interstitial oxide ions and decreased the conductivity.
- OSTI ID:
- 22212460
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 3 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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