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TiO{sub 2} nanotube-based field effect transistors and their application as humidity sensors

Journal Article · · Materials Research Bulletin
 [1];  [2]; ; ;  [1]
  1. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong)
  2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, Anhui (China)

Highlights: Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes fabricated by directly anodizing a Ti foil followed by ultrasonification. Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes used to construct field effect transistors. Black-Right-Pointing-Pointer Electrical properties measured from the TiO{sub 2} nanotube-based field effect transistors. Black-Right-Pointing-Pointer Sensitive response of the TiO{sub 2} nanotube-based field effect transistors to water vapor. -- Abstract: TiO{sub 2} nanotubes are the building units of various devices of energy- and environment-related applications and the property studies of individual TiO{sub 2} nanotubes are important to understand and improve the performance of TiO{sub 2} nanotubes-based devices. Here we report the electrical property study of individual TiO{sub 2} nanotubes enabled by the construction of field effect transistors based on individual TiO{sub 2} nanotubes. It is found that individual TiO{sub 2} nanotubes exhibit typical n-type electrical conduction characteristics, with electron mobility of 6.9 Multiplication-Sign 10{sup -3} cm{sup 2}/V s at V{sub ds} = 1 V, and electron concentration of 2.8 Multiplication-Sign 10{sup 17} cm{sup -3}. Moreover, the on-off ratio of the TiO{sub 2} nanotube-based field effect transistors is as high as 10{sup 3}. Humidity sensing test shows the sensitive response of the individual TiO{sub 2} nanotubes to water vapor.

OSTI ID:
22212385
Journal Information:
Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 1 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
Country of Publication:
United States
Language:
English

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