TiO{sub 2} nanotube-based field effect transistors and their application as humidity sensors
- Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong)
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, Anhui (China)
Highlights: Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes fabricated by directly anodizing a Ti foil followed by ultrasonification. Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes used to construct field effect transistors. Black-Right-Pointing-Pointer Electrical properties measured from the TiO{sub 2} nanotube-based field effect transistors. Black-Right-Pointing-Pointer Sensitive response of the TiO{sub 2} nanotube-based field effect transistors to water vapor. -- Abstract: TiO{sub 2} nanotubes are the building units of various devices of energy- and environment-related applications and the property studies of individual TiO{sub 2} nanotubes are important to understand and improve the performance of TiO{sub 2} nanotubes-based devices. Here we report the electrical property study of individual TiO{sub 2} nanotubes enabled by the construction of field effect transistors based on individual TiO{sub 2} nanotubes. It is found that individual TiO{sub 2} nanotubes exhibit typical n-type electrical conduction characteristics, with electron mobility of 6.9 Multiplication-Sign 10{sup -3} cm{sup 2}/V s at V{sub ds} = 1 V, and electron concentration of 2.8 Multiplication-Sign 10{sup 17} cm{sup -3}. Moreover, the on-off ratio of the TiO{sub 2} nanotube-based field effect transistors is as high as 10{sup 3}. Humidity sensing test shows the sensitive response of the individual TiO{sub 2} nanotubes to water vapor.
- OSTI ID:
- 22212385
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 1 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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