Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals
- Baku State University (Azerbaijan)
In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.
- OSTI ID:
- 22210588
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dependence of carrier mobility on an electric field in gallium selenide crystals
Preparation and properties of hydrogen-intercalated indium and gallium monoselenides
On the specific electrophysical properties of n-InSe single crystals
Journal Article
·
Fri Jun 15 00:00:00 EDT 2012
· Semiconductors
·
OSTI ID:22004666
Preparation and properties of hydrogen-intercalated indium and gallium monoselenides
Journal Article
·
Thu Oct 01 00:00:00 EDT 1987
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:5220145
On the specific electrophysical properties of n-InSe single crystals
Journal Article
·
Thu Jan 14 23:00:00 EST 2016
· Semiconductors
·
OSTI ID:22469629