Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

Journal Article · · Semiconductors
;  [1]; ; ; ; ;  [2]
  1. Kyiv State University (Ukraine)
  2. National Technical University 'Kharkiv Polytechnical Institute' (Ukraine)

Studies into the effect of the conditions of pulsed electrodeposition upon the structural and sub-structural parameters, morphology, and optical properties of ZnO-crystallite arrays make it possible to establish those parameters optimal for the formation of ZnO nanorods oriented normally to the substrate surface. These parameters are as follows: an electrolyte temperature of 70-85 Degree-Sign C, duty cycle of 40%, and a pulse-repetition frequency of 2 Hz. The nanorod dimensions can be varied by heating or cooling the electrolyte within the above-indicated limits; as a result, small-sized nanorods can be electrically deposited on the surface of larger nanorods to form hierarchical nanostructures. By varying the duty cycle, it is possible to modify the surface morphology of the arrays up to the formation of mesoporous ZnO networks. In combination with ZnO nanorods, such networks are capable of forming hierarchical nanostructures with large specific areas.

OSTI ID:
22210576
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 47; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

Similar Records

Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode
Journal Article · Fri Jun 15 00:00:00 EDT 2012 · Semiconductors · OSTI ID:22004653

Electrodeposition of Zn based nanostructure thin films for photovoltaic applications
Journal Article · Mon Mar 30 00:00:00 EDT 2015 · AIP Conference Proceedings · OSTI ID:22391286

Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition
Journal Article · Wed Mar 15 00:00:00 EDT 2017 · Semiconductors · OSTI ID:22649607