The analysis of leakage current in MIS Au/SiO{sub 2}/n-GaAs at room temperature
- Gazi University, Department of Physics, Faculty of Science (Turkey)
The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO{sub 2}/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I–V) were performed at room temperature. The using of leakage current values in SiO{sub 2} at electric fields of 1.46–3.53 MV/cm, ln(J/E) vs. <##> $ /sqrt E $√E graph showed good linearity. Rom this plot, dielectric constant of SiO{sub 2} was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO{sub 2} dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06–0.73 and 0.79–1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.
- OSTI ID:
- 22210497
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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