Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

Journal Article · Tue Oct 15 04:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S106378261310014X· OSTI ID:22210490

Khrebtov, A. I. ^[1]; Talalaev, V. G. ^[2]; Werner, P. ^[3]; Danilov, V. V. ^[4]; Artemyev, M. V. ^[5]; Novikov, B. V. ^[2]; Shtrom, I. V. ^[1]; Panfutova, A. S. ^[4]; Cirlin, G. E. ^[1]

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1. St. Petersburg Academic University-Nanotechnology Research and Education Center, Russian Academy of Sciences (Russian Federation)
2. St. Petersburg State University, Fock Institute of Physics (Russian Federation)
3. Max-Planck-Institut fuer Mikrostukturphysik (Germany)
4. Vavilov State Optical Institute (Russian Federation)
5. Belarussian State University, Institute for Physicochemical Problems (Belarus)

The possibility of fabricating a composite system based on colloidal CdSe/ZnS quantum dots and GaAs nanowires is demonstrated and the structural and emission properties of this system are investigated by electron microscopy and photoluminescence spectroscopy techniques. The good wettability and developed surface of the nanowire array lead to an increase in the surface density of quantum dots and, as a consequence, in the luminosity of the system in the 600-nm wavelength region. The photoluminescence spectrum of the quantum dots exhibits good temperature stability in the entire range 10-295 K. The impact of surface states on energy relaxation and the role of exciton states in radiative recombination in the quantum dots are discussed.

• OSTI ID: 22210490
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 47; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM SELENIDES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
LUMINOSITY
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WIRES
SPECTRA
SPECTROSCOPY
SURFACES
WAVELENGTHS
ZINC SULFIDES