Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells
- Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
- Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)
The effects of tunneling between two parallel two-dimensional electron gases in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to B{sub Double-Vertical-Line} = 9.0 T) in the temperature range T = 1.8-70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime {tau}{sub q}{sup -}(T) is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, {rho}{sub xx}(B{sub Double-Vertical-Line }, T). The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime {tau}{sub q}{sup -}(T) at T > 0.1T{sub F} cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.
- OSTI ID:
- 22210450
- Journal Information:
- Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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