Indium and gallium oxynitrides prepared in the presence of Zn{sup 2+} by ammonolysis of the oxide precursors obtained via the citrate route

Journal Article · Thu Apr 15 04:00:00 EDT 2010 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2009.10.008· OSTI ID:22202582

Miyaake, Azumi; Masubuchi, Yuji; Takeda, Takashi ^[1]; Kikkawa, Shinichi ^[1]

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1. Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)

Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In{sub 0.97}{open_square}{sub 0.03}][N{sub 0.92}O{sub 0.08}] at 660 {sup o}C and [Ga{sub 0.89}{open_square}{sub 0.11}][N{sub 0.66}O{sub 0.34}] at 850 {sup o}C, respectively, where {open_square} refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn{sup 2+} by forming complete solid solutions of (InN){sub 1-x}(ZnO){sub x} and (GaN){sub 1-y}(ZnO){sub y}. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x {approx} 0.23 and y {approx} 0.33 compared to the case without zinc.

• OSTI ID: 22202582
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 4 Vol. 45; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
AMMONIA
AMMONOLYSIS
GALLIUM
GALLIUM NITRIDES
GALLIUM OXIDES
INDIUM
INDIUM NITRIDES
INORGANIC COMPOUNDS
NITRIDATION
OPTICAL PROPERTIES
SOLID SOLUTIONS
ZINC IONS
ZINC OXIDES