skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronegativity estimation of electronic polarizabilities of semiconductors

Journal Article · · Materials Research Bulletin
 [1];  [1]
  1. State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

On the basis of the viewpoint of structure-property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity and principal quantum number. The calculated electronic polarizabilities are in good agreement with reported values in the literature. Both electronegativity and principal quantum number can effectively reflect the detailed chemical bonding behaviors of constituent atoms in these semiconductors, which determines the magnitude of their electronic polarizabilities. The present work provides a useful guide to compositionally design novel semiconductor materials, and further explore advanced electro-optic devices.

OSTI ID:
22202561
Journal Information:
Materials Research Bulletin, Vol. 45, Issue 3; Conference: AFM 2009: Workshop on advances in functional materials, Beijing (China), 8-12 Jun 2008, ISFM 2009: 3. international symposium on functional materials, Beijing (China), 8-12 Jun 2008; Other Information: Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English