Counting molecular-beam grown graphene layers

Journal Article · Mon Jun 17 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4811708· OSTI ID:22163030

Plaut, Annette S. ^[1]; Wurstbauer, Ulrich ^[2]; Pinczuk, Aron ^[2]; Garcia, Jorge M. ^[3]; Pfeiffer, Loren N. ^[4]

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1. School of Physics, University of Exeter, Exeter EX4 4QL (United Kingdom)
2. Department of Physics, Columbia University, New York, New York 10027 (United States)
3. MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760 (Spain)
4. Electrical Engineering Department, Princeton University, New Jersey 08544 (United States)

We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

• OSTI ID: 22163030
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
FILMS
GRAPHENE
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHONONS
RAMAN SPECTRA
SILICON
SUBSTRATES