Ion-beam-induced bending of freestanding amorphous nanowires: The importance of the substrate material and charging

Journal Article · Mon May 27 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4807663· OSTI ID:22162962

Cui, Ajuan; Li, Wuxia; Liu, Zhe; Luo, Qiang; Gu, Changzhi ^[1]; Fenton, J. C. ^[2]; Shen, Tiehan H. ^[3]

---

1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
2. London Centre for Nanotechnology, University College London, London WC1E 7JE (United Kingdom)
3. Joule Physics Laboratory, University of Salford, Manchester M5 4WT (United Kingdom)

Ion-beam irradiation offers great flexibility and controllability in the construction of freestanding nanostructures with multiple advanced functionalities. Here, we present and discuss the bending of free-standing nanowires, against, towards, and ultimately parallel to a flux of directional ion irradiation. Bending components both along and perpendicular to the incident ion beam were observed, and the bending behavior was found to depend both on the ion beam scanning strategy and on the conductivity of the supporting substrate. This behavior is explained by an ion-irradiation-related electrostatic interaction. Our findings suggest the prospect of exploiting this technique to engineer 3D nanostructures for advanced applications.

• OSTI ID: 22162962
• Journal Information: Applied Physics Letters, Vol. 102, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
BENDING
ELECTROSTATICS
FLEXIBILITY
INTERACTIONS
ION BEAMS
IRRADIATION
QUANTUM WIRES
SUBSTRATES
TUNGSTEN