Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing

Journal Article · Tue May 21 04:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4805778· OSTI ID:22162929

Li, Jichao; Yao, Bin ^[1]; Li, Yongfeng ^[1]; Ding, Zhanhui; Xu, Ying ^[2]; Zhang, Ligong; Zhao, Haifeng; Shen, Dezhen ^[3]

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1. Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education and Department of Physics, Jilin University, Changchun 130023 (China)
2. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China)
3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033 (China)

The effects of post-annealing on conductivity of phosphorus-doped ZnO (PZO) films grown at 500 Degree-Sign C by radio frequency magnetron sputtering are investigated in a temperature ranging from 600 Degree-Sign C to 900 Degree-Sign C. The as-grown PZO exhibits n-type conductivity with an electron concentration of 1.19 Multiplication-Sign 10{sup 20} cm{sup -3}, and keeps n-type conductivity as annealed at 600 Degree-Sign C-700 Degree-Sign C but electron concentration decreases with increasing temperature. However, it converts to p-type conductivity as annealed at 800 Degree-Sign C. Further increasing temperature, it still shows p-type conductivity but the hole concentration decreases. It is found that the P occupies mainly Zn site (P{sub Zn}) in the as-grown PZO, which accounts for good n-type conductivity of the as-grown PZO. The amount of the P{sub Zn} decreases with increasing temperature, while the amount of Zn vacancy (V{sub Zn}) increases from 600 Degree-Sign C to 800 Degree-Sign C but decreases greatly at 900 Degree-Sign C, resulting in that the amount of P{sub Zn}-2V{sub Zn} complex increases with increasing temperature up to 800 Degree-Sign C but decreases above 800 Degree-Sign C. It is suggested that the P{sub Zn}-2V{sub Zn} complex acceptor is responsible for p-type conductivity, and that the conversion of conductivity is due to the change of the amount of the P{sub Zn} and P{sub Zn}-2V{sub Zn} with annealing temperature.

• OSTI ID: 22162929
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CONVERSION
CRYSTALS
DENSITY
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
ELECTRONS
MAGNETRONS
NITROGEN COMPLEXES
PHOSPHORUS ADDITIONS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
ZINC OXIDES