Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire
- Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
We demonstrate polarized blue single photon emission up to 200 K from an In{sub 0.2}Ga{sub 0.8}N quantum dot in a single Al{sub 0.1}Ga{sub 0.9}N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g{sup (2)}(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.
- OSTI ID:
- 22162853
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM COMPOUNDS
DEPOSITION
EXCITATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LIFETIME
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
POLARIZATION
QUANTUM DOTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
WAVELENGTHS