Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Journal Article · Mon Feb 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4793434· OSTI ID:22162748

Lee, Kai-Hsuan; Chen, Chia-Hao ^[1]; Chang, Ping-Chuan ^[2]; Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn ^[3]; Shiu, Hung-Wei; Chang, Lo-Yueh ^[1]

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1. Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China)
2. Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China)
3. Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China)

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

• OSTI ID: 22162748
• Journal Information: Applied Physics Letters, Vol. 102, Issue 7; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ADDITIONS
DEPOSITION
DOPED MATERIALS
EPITAXY
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
MAGNESIUM ADDITIONS
PHOTOELECTRON SPECTROSCOPY
P-N JUNCTIONS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SYNCHROTRON RADIATION
ZINC OXIDES