Polarization induced hole doping in graded Al{sub x}Ga{sub 1-x}N (x = 0.7 {approx} 1) layer grown by molecular beam epitaxy
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)
Polarization induced hole doping on the order of {approx}10{sup 18} cm{sup -3} is achieved in linearly graded Al{sub x}Ga{sub 1-x}N (x = 0.7 {approx} 1) layer grown by molecular beam epitaxy. Graded Al{sub x}Ga{sub 1-x}N and conventional Al{sub 0.7}Ga{sub 0.3}N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded Al{sub x}Ga{sub 1-x}N:Be (x = 0.7 {approx} 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al{sub 0.7}Ga{sub 0.3}N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.
- OSTI ID:
- 22162735
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 6; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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