Optical contrast and laser-induced phase transition in GeCu{sub 2}Te{sub 3} thin film
- Department of Materials Science, Tohoku University, 6-6-11-1016 Aoba-yama, Aoba-ku, Sendai 980-8579 (Japan)
Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu{sub 2}Te{sub 3} film based on the reflectance of amorphous and crystalline states. The GeCu{sub 2}Te{sub 3} film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge{sub 2}Sb{sub 2}Te{sub 5} film. The crystallization starting time of the as-deposited GeCu{sub 2}Te{sub 3} film was as fast as that of the as-deposited Ge{sub 2}Sb{sub 2}Te{sub 5} film. Furthermore, the GeCu{sub 2}Te{sub 3} crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge{sub 2}Sb{sub 2}Te{sub 5}.
- OSTI ID:
- 22162722
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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