An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Journal Article · Mon Jan 14 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4774404· OSTI ID:22162666

Rein, M. H.; Holt, A. O. ^[1]; Hohmann, M. V.; Klein, A. ^[2]; Thogersen, A. ^[3]; Mayandi, J. ^[4]; Monakhov, E. V. ^[1]

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1. Institute for Energy Technology, Department of Solar Energy, Instituttveien 18, 2008 Kjeller (Norway)
2. Technische Universitaet Darmstadt, Institute of Materials Science, Surface Science Division, Petersenstrasse 32, D-64287 Darmstadt (Germany)
3. SINTEF-Materials and Chemistry Syntesis and Properties, Forskningsveien 1, Pb. 124 Blindern, 0314 Oslo (Norway)
4. Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai (India)

The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

• OSTI ID: 22162666
• Journal Information: Applied Physics Letters, Vol. 102, Issue 2; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
INDIUM ADDITIONS
INTERFACES
LAYERS
MAGNETRONS
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
THIN FILMS
TIN
TIN OXIDES
X-RAY PHOTOELECTRON SPECTROSCOPY