Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Journal Article · Mon Jan 07 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4774400· OSTI ID:22162660

Jian, Zhang; Hui, Yang; Qilong, Zhang ^[1]; Shurong, Dong ^[2]; Luo, J. K. ^[2]

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1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
2. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10{sup 3}, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

• OSTI ID: 22162660
• Journal Information: Applied Physics Letters, Vol. 102, Issue 1; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
DEPOSITION
DEPOSITS
ELECTRIC CONTACTS
PLASMA
PLATINUM
RANDOMNESS
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SWITCHING DIODES
THIN FILMS
TRAPS
ZINC OXIDES