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Title: Synthesis and characterization of oxyanion (phosphate, sulphate) doped Ba{sub 2}Sc{sub 2-y}Ga{sub y}O{sub 5}

Journal Article · · Journal of Solid State Chemistry
;  [1]
  1. School of Chemistry, University of Birmingham, Birmingham B15 2TT (United Kingdom)

In this paper we examine the effect of partial substitution of Ga for Sc in the oxyanion (phosphate, sulphate) containing perovskites, Ba{sub 2}Sc{sub 2-x}P{sub x}O{sub 5+x} and Ba{sub 2}Sc{sub 2-x}S{sub x}O{sub 5+3x/2} with the samples analysed through a combination of X-ray diffraction, TGA, Raman spectroscopy and conductivity measurements. The results demonstrate that in both cases, Ga can be incorporated in place of Sc up to 40%. In order to accommodate the increasing Ga content, a reduction in the oxyanion content is required. Thus for the highest Ga content sample achieved, only 10% oxyanion incorporation was achieved giving endmember compositions of Ba{sub 2}ScGa{sub 0.8}P{sub 0.2}O{sub 5.2} and Ba{sub 2}ScGa{sub 0.8}S{sub 0.2}O{sub 5.3} for phosphate and sulphate doping respectively. While the Ga doping was shown to significantly improve the stability of the systems towards CO{sub 2} containing atmospheres, conductivity measurements showed a reduction in the conductivity with increasing Ga content. - Graphical abstract: Phosphate and sulphate doped Ba{sub 2}Sc{sub 2-x}Ga{sub x}O{sub 5} perovskites have been successfully prepared, with the highest conductivities observed for samples with the lowest Ga content. Highlights: Black-Right-Pointing-Pointer The successful synthesis of phosphate and sulphate doped Ba{sub 2}Sc{sub 2-x}Ga{sub x}O{sub 5} perovskites. Black-Right-Pointing-Pointer The demonstration of significant oxide ion and proton conduction in these perovskites. Black-Right-Pointing-Pointer The demonstration of improved CO{sub 2} stability with increasing Ga content.

OSTI ID:
22150025
Journal Information:
Journal of Solid State Chemistry, Vol. 198; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English