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Title: Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}

Abstract

We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-typemore » skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.« less

Authors:
;  [1];  [1];  [1];  [2]
  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)
  2. Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States)
Publication Date:
OSTI Identifier:
22149932
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: 196; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FERMI LEVEL; THERMOELECTRIC PROPERTIES

Citation Formats

Tan, Gangjian, Wang, Shanyu, Tang, Xinfeng, Li, Han, and Uher, Ctirad. Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. United States: N. p., 2012. Web. doi:10.1016/J.JSSC.2012.06.019.
Tan, Gangjian, Wang, Shanyu, Tang, Xinfeng, Li, Han, & Uher, Ctirad. Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. United States. https://doi.org/10.1016/J.JSSC.2012.06.019
Tan, Gangjian, Wang, Shanyu, Tang, Xinfeng, Li, Han, and Uher, Ctirad. Sat . "Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}". United States. https://doi.org/10.1016/J.JSSC.2012.06.019.
@article{osti_22149932,
title = {Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}},
author = {Tan, Gangjian and Wang, Shanyu and Tang, Xinfeng and Li, Han and Uher, Ctirad},
abstractNote = {We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-type skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.},
doi = {10.1016/J.JSSC.2012.06.019},
url = {https://www.osti.gov/biblio/22149932}, journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = ,
volume = 196,
place = {United States},
year = {2012},
month = {12}
}