BaGa{sub 2}GeX{sub 6}(X=S, Se): New mid-IR nonlinear optical crystals with large band gaps

Journal Article · Thu Nov 15 04:00:00 EST 2012 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2012.01.043· OSTI ID:22149902

Lin, Xinsong; Guo, Yifeng ^[1]; Ye, Ning ^[1]

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1. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

New middle infrared nonlinear optical crystals of BaGa{sub 2}GeX{sub 6}(X=S, Se) have been synthesized. The structures of both BaGa{sub 2}GeS{sub 6} and BaGa{sub 2}GeSe{sub 6} were found to be isomorphous exhibiting a three-dimensional framework constructed by the parallel alignment of Ga or Ge tetrahedron groups along the c-aix. The ultraviolet transmittance spectrum indicates the short-wavelength absorption edges of BaGa{sub 2}GeS{sub 6} and BaGa{sub 2}GeSe{sub 6} are 380 nm and 440 nm, respectively. The IR transmittance spectrum shows that the absorption edge of the BaGa{sub 2}GeS{sub 6} crystal is 13.7 {mu}m. Second-harmonic generation of the powder samples was measured with a 2.05 {mu}m laser using the Kurtz and Perry technique, which showed that BaGa{sub 2}GeS{sub 6} and BaGa{sub 2}GeSe{sub 6} are phase-matched materials, and their measured SHG coefficient is {approx}2.1 and {approx}3.5 times as large as the coefficient of AgGaS{sub 2}, or 26.3 pm/V and 43.7 pm/V. - Graphical abstract: The structure of BGGS viewed along the a and c axis and an as-grown crystal. Highlights: Black-Right-Pointing-Pointer Mid-IR NLO crystals of BaGa{sub 2}GeX{sub 6}(X=S, Se) with wide band-gap have been discovered. Black-Right-Pointing-Pointer The structures were constructed by the parallel alignment of Ga or Ge tetrahedra. Black-Right-Pointing-Pointer They are phase-matchable material with their SHG coefficient of 26.3 and 43.7 pm/V.

• OSTI ID: 22149902
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. 195; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

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