Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals
- Low Temperature Physics and Superconductivity Department, Faculty of Physics, M.V. Lomonosov Moscow State, University, 119991 GSP-1, Moscow (Russian Federation)
The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200<300 K and decreases at T<200 K. The Seebeck coefficient S for all compositions is positive and decreases due to the Sn doping in the whole temperature range. The scattering on the ionized impurity increases due to Sn doping. - Graphical abstract: Influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150K<300 K and decreases at T<150 K with Sn-doping. Concentration of holes and electrical conductivity decreases when the value of Bi content x increases in solid solution (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} as shown in figure. By increasing the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The thermal conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to Sn doping. The Seebeck coefficient S for all compositions is positive and decreases due to Sn doping in the whole temperature range due to increase of the hole concentration under Sn doping. Highlights: Black-Right-Pointing-Pointer thermoelectric figure of merit for p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} investigated at 7-300 K. Black-Right-Pointing-Pointer preferential scattering is ionized impurity scattering in Sn doped samples. Black-Right-Pointing-Pointer electrical conductivity increases at 150 K<300 K and decreases at T<150 K. Black-Right-Pointing-Pointer the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} with Sn doping. Black-Right-Pointing-Pointer the thermal conductivity of (Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} decreases due to Sn doping.
- OSTI ID:
- 22149805
- Journal Information:
- Journal of Solid State Chemistry, Vol. 193; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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