Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO{sub 2} quantum dots
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
- University of Mining and Technology, Institute of Theoretical Physics (Germany)
- Lappeenranta University of Technology (Finland)
- Korea Polytechnic University (Korea, Republic of)
Observation at the room temperature the spectra of the resonant inelastic light scattering by the spatially confined optical phonons as well as the excitonic luminescence caused by confinement effects in the ensemble of isolated quantum dots (QDs) nc-Si/SiO{sub 2} is reported. It is shown that the samples investigated are high purity and high crystalline perfection quality nc-Si/SiO{sub 2} QDs without amorphous phase {alpha}-Si and contaminants. Comparison between the experimental data obtained and phenomenological model of the strong space confinement of optical phonons revealed the need of the more accurate form of the weighted function for the confinement of optical phonons. It is shown that simultaneous detection of the inelastic light scattering by the confinement of phonons and the excitonic luminescence spectra by the confined electron-hole pairs in the nc-Si/SiO{sub 2} QDs allows selfconsistently to determine more accurate values of the diameter of the nc-Si/SiO{sub 2} QDs.
- OSTI ID:
- 22126572
- Journal Information:
- Semiconductors, Vol. 47, Issue 5; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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