Tuning the formation of p-type defects by peroxidation of CuAlO{sub 2} films
- Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
- Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)
p-type conduction of CuAlO{sub 2} thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (V{sub Cu}), and interstitial oxygen (O{sub i}) was established. It is shown that peroxidation of CuAlO{sub 2} films may lead to the increased formation probability of acceptors (V{sub Cu} and O{sub i}), thus, increasing the hole concentration. The dependence of the V{sub Cu} density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO{sub 2}. Understanding the defect-related p-type conductivity of CuAlO{sub 2} is essential for designing optoelectronic devices and improving their performance.
- OSTI ID:
- 22122840
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
CONCENTRATION RATIO
COPPER COMPOUNDS
CRYSTAL DEFECTS
CRYSTALS
DENSITY
DEPOSITION
DESIGN
INTERSTITIALS
OXYGEN
PERFORMANCE
SEMICONDUCTOR MATERIALS
SPECTROMETERS
SPUTTERING
THIN FILMS
VACANCIES
X RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY