Comment on 'Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors'[Appl. Phys. Lett. 100, 063306 (2012)]
- Materials R and D Center, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do 446-712 (Korea, Republic of)
No abstract prepared.
- OSTI ID:
- 22122831
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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