The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4815995· OSTI ID:22122813

Casey Boutwell, R.; Ming, Wei; Schoenfeld, Winston V. ^[1]

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1. CREOL, College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816-2700 (United States)

Cubic Zn{sub 1-x}Mg{sub x}O thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate and applied Radio-Frequency (RF) plasma power were varied to investigate the impact on film growth and optoelectronic device performance. Solar-blind and visible-blind detectors were fabricated with metal-semiconductor-metal interdigitated Ni/Mg/Au contacts and responsivity is compared under different growth conditions. Increasing oxygen flow rate and RF plasma power increased Zn incorporation in the film, which leads to phase segregation at relatively high Zn/Mg ratio. Responsivity as high as 61 A/W was measured in phase-segregated ZnMgO visible-blind detectors.

• OSTI ID: 22122813
• Journal Information: Applied Physics Letters, Vol. 103, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
FLOW RATE
GOLD
LAYERS
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NICKEL
OXYGEN COMPOUNDS
PHOTODETECTORS
PLASMA
RADIOWAVE RADIATION
SEGREGATION
SEMICONDUCTOR MATERIALS
SENSORS
THIN FILMS
ULTRAVIOLET RADIATION
ZINC COMPOUNDS