RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

Journal Article · Fri Apr 19 00:00:00 EDT 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4802317· OSTI ID:22116957

Meersschaut, J.; Witters, T. ^[1]; Kaeyhkoe, M. ^[2]; Lenka, H. P.; Vandervorst, W. ^[3]; Zhao, Q.; Vantomme, A. ^[4]

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1. Imec, Kapeldreef 75, B-3001 Leuven (Belgium)
2. Imec, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland)
3. Imec, Kapeldreef 75, B-3001 Leuven (Belgium) and IKS, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
4. IKS, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350 Degree-Sign C to 550 Degree-Sign C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He{sup +}) and PIXE measurements (1.5 MeV H{sup +}) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to push the sensitivity limit for both approaches are proposed.

• OSTI ID: 22116957
• Journal Information: AIP Conference Proceedings, Vol. 1525, Issue 1; Conference: 22. international conference on application of accelerators in research and industry, Ft. Worth, TX (United States), 5-10 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ACCURACY
CHLORINE
COMPARATIVE EVALUATIONS
EMISSION SPECTRA
HELIUM IONS
HYDROGEN IONS 1 PLUS
MEV RANGE
PERFORMANCE
PIXE ANALYSIS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SENSITIVITY
SILICON
THIN FILMS
TITANIUM NITRIDES
TRACE AMOUNTS
X-RAY SPECTRA