Characteristics of silicon etching by silicon chloride ions
- Center for Atomic and Molecular Technologies, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871 (Japan)
- TEL Technology Center Tsukuba, Tokyo Electron Ltd., 17 Miyukigaoka Tsukuba-shi, Ibaraki 305-0841 (Japan)
Plasmas generated from halogen-containing gases, such as Cl{sub 2} or HBr, have been widely used in gate etching processes for semiconductor chip manufacturing. Such plasmas may contain silicon halide ions formed by the ionization of etching products that enter the plasma. In this study, to illustrate Si etching by such silicon halide ions, the sputtering yield of Si by SiCl{sub x}{sup +} (with x = 1 or 3) ions has been obtained as a function of the incident ion energy by using a mass-selected ion beam injection system. It has been found that, at sufficiently low energy, the incidence of SiCl{sup +} ions leads to the deposition of Si which may affect profile control in microelectronic device fabrication processes.
- OSTI ID:
- 22116040
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 3 Vol. 31; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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