Electrochemical properties of magnetron sputtered WO{sub 3} thin films

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791259· OSTI ID:22116025

Madhavi, V.; Kondaiah, P.; Hussain, O. M.; Uthanna, S. ^[1]

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1. Department of Physics, Sri Venkateswara University, Tirupati - 517 502 (India)

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly in the first few cycles and stabilized at a lesser stage.

• OSTI ID: 22116025
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON
ATMOSPHERES
CHEMICAL COMPOSITION
DEPOSITION
ELECTROCHEMISTRY
MORPHOLOGY
OXYGEN
PERFORMANCE
SCANNING ELECTRON MICROSCOPY
SPUTTERING
STOICHIOMETRY
SUBSTRATES
SURFACES
THIN FILMS
TUNGSTEN OXIDES
X-RAY PHOTOELECTRON SPECTROSCOPY