Dependence of the surface topology and raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si films on the composition variation over the layer thickness

Journal Article · Wed May 15 00:00:00 EDT 2013 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774513030127· OSTI ID:22113612

Lunin, L. S.; Sysoev, I. A. ^[1]; Bavizhev, M. D.; Kuleshov, D. S.; Malyavin, F. F. ^[2]

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1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
2. South Russian State Technical University (Russian Federation)

The surface topology and Raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge{sub x}Si{sub 1-x} alloy at the constant cumulative Ge fraction in the film (x{sub int} = 0.5) affects the surface morphology of the grown Ge{sub x}Si{sub 1-x}/Si layer. The heterostructures were grown by molecular-beam epitaxy.

• OSTI ID: 22113612
• Journal Information: Crystallography Reports, Vol. 58, Issue 3; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FILMS
GERMANIUM ALLOYS
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
RAMAN EFFECT
SILICON ALLOYS
SPECTRA
SURFACES
THICKNESS
TOPOLOGY