High resolution TOF - SIMS depth profiling of nano-film multilayers

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791220· OSTI ID:22113516

Bhushan, K. G.; Mukundhan, R.; Gupta, S. K. ^[1]

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1. Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.

• OSTI ID: 22113516
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CARBON
DEPTH
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
MIXING
NANOSTRUCTURES
RESOLUTION
ROUGHNESS
SILICON
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS
TIME-OF-FLIGHT METHOD
TUNGSTEN