Disorder-free sputtering method on graphene

Journal Article · Sat Sep 15 00:00:00 EDT 2012 · AIP Advances

DOI:https://doi.org/10.1063/1.4739783· OSTI ID:22107634

Peng, Qiu Xue; Jun, Shin Young; Jing, Niu; Kulothungasagaran, Narayanapillai ^[1]; Kalon, Gopinadhan; Yang, Hyunsoo ^[1]; Caiyu, Qiu ^[2]; Ting, Yu ^[3]

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1. Department of Electrical and Computer Engineering, National University of Singapore, 117576 (Singapore)
2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637616 (Singapore)
3. Graphene Research Centre, National University of Singapore, 117546 (Singapore)

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

• OSTI ID: 22107634
• Journal Information: AIP Advances, Vol. 2, Issue 3; Other Information: (c) 2012 Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DEPOSITION
DEPOSITS
GRAPHENE
INDIUM
SPUTTERING
SUBSTRATES
TIN OXIDES