Identification of copper-copper and copper-hydrogen complexes in silicon
- Technische Universitaet Dresden (Germany)
The centers formed in silicon as a result of interaction between the substitutional copper impurity (Cu{sub s}) and interstitial copper (Cu{sub i}) or hydrogen (H) atoms, which are mobile at room temperature, are investigated in this study using the deep-level transient spectroscopy (DLTS) technique. It is shown that a well-known photoluminescence center, which includes four copper atoms, is formed from Cu{sub s} via the subsequent addition of Cu{sub i}. Both intermediate complexes (Cu{sub s}-Cu{sub i} and Cu{sub s}-2Cu{sub i}) are identified by their deep levels in the lower half of the band gap. It is found that Cu{sub s} atoms form complexes with one, two, and three hydrogen atoms, with Cu{sub s}-H and Cu{sub s}-2H being electrically active. It is noted that the addition of either hydrogen or copper has a similar effect on the deep-level structure of Cu{sub s}.
- OSTI ID:
- 22105556
- Journal Information:
- Semiconductors, Vol. 47, Issue 2; Conference: Silicon 2012: 9. international conference 'Silicon-2012', St. Petersburg (Russian Federation), 9-13 Jul 2012, 8. school for young scientists, St. Petersburg (Russian Federation), 9-13 Jul 2012; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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