Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

Journal Article · Fri Mar 15 00:00:00 EDT 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4794799· OSTI ID:22105434

Zheng, Zuo; Morshed, Muhammad; Jianlin, Liu ^[1]; Beyermann, W. P. ^[2]; Jianguo, Zheng ^[3]; Yan, Xin ^[4]

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1. Quantum Structures Laboratory, Department of Electrical Engineering, University of California at Riverside, Riverside, California 92521 (United States)
2. Department of Physics and Astronomy, University of California at Riverside, Riverside, California 92521 (United States)
3. Laboratory for Electron and X-ray Instrumentation, California Institute for Telecommunications and Information Technology, University of California Irvine, Irvine, California 92697 (United States)
4. NHMFL, Florida State University, 1800 E. Paul Dirac Dr., Tallahassee, FL 32310-3706 (United States)

Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

• OSTI ID: 22105434
• Journal Information: AIP Advances, Vol. 3, Issue 3; Other Information: (c) 2013 Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANISOTROPY
DOPED MATERIALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
HALL EFFECT
IONS
MAGNETIC MOMENTS
MANGANESE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES