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First observation of magnetoelectric effect in M-type hexaferrite thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4795721· OSTI ID:22102402
; ;  [1]
  1. Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

The magnetoelectric (ME) effect in M-type hexaferrite thin films is reported. Prior to this work, the ME effect in hexaferrite materials was observed only in bulk polycrystalline materials. Thin films of SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} were grown on sapphire (0001) using pulsed laser deposition. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1250 G, g-factor of 2.66, and coercive field of 20 Oe for these magnetoelectric M-type hexaferrite thin films. The magnetoelectric effect was confirmed by monitoring the change rate in remanence magnetization with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 12.8% with the application of only 1 V (DC voltage). We deduced a magnetoelectric coupling, {alpha}, of 6.07 Multiplication-Sign 10{sup -9} s m{sup -1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

OSTI ID:
22102402
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English