Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

Journal Article · Thu Mar 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4795510· OSTI ID:22102306

Sgourou, E. N.; Londos, C. A.; Aliprantis, D. ^[1]; Timerkaeva, D. ^[2]; Chroneos, A. ^[3]; Caliste, D.; Pochet, P. ^[2]

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1. University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)
2. Laboratoire de Simulation Atomistique (L-Sim), SP2M, INAC, CEA-UJF, 38054 Grenoble Cedex 9 (France)
3. Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

We investigate the impact of isovalent (in particular lead (Pb)) doping on the production and thermal stability of the vacancy-related (VO) and the interstitial-related (C{sub i}O{sub i} and C{sub i}C{sub s}) pairs in 2 MeV electron irradiated Si samples. We compare the Cz-Si samples with high and low carbon concentration, as well as with Pb-C and Ge-C codoped samples. Using Fourier Transform Infrared Spectroscopy (FTIR), we first determine that under the examined conditions the production of VO decreases with the increase of the covalent radius of the prevalent dopant. Moreover, the production of the VO, C{sub i}O{sub i}, and C{sub i}C{sub s} pairs is quite suppressed in Pb-doped Si. In addition, we conclude to an enhanced trapping of both C{sub i} and C{sub s} by Pb impurity under irradiation. The results are further discussed in view of density functional theory calculations. The relative thermodynamic stability of carbon and interstitial related complexes was estimated through the calculations of binding energies of possible defect pairs. This allows to investigate the preferred trapping of vacancies in Pb-doped samples and interstitials in the Ge-doped samples. The different behavior is revealed by considering the analysis of the ratio of vacancy-related to interstitial-related clusters derived from the FTIR measurements. The presence of PbV complexes is confirmed due to the mentioned analysis.

• OSTI ID: 22102306
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BINDING ENERGY
CARBON ADDITIONS
CRYSTAL DEFECTS
DENSITY FUNCTIONAL METHOD
DOPED MATERIALS
FOURIER TRANSFORM SPECTROMETERS
GERMANIUM ADDITIONS
IMPURITIES
INFRARED SPECTRA
INTERACTIONS
INTERSTITIALS
IRRADIATION
MEV RANGE 01-10
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES