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Title: Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment

Abstract

Formation of a ZnO{sub 2} layer by H{sub 2}O{sub 2} treatment for single crystal ZnO (0001) substrates was studied. X-ray diffraction (XRD) peaks of ZnO{sub 2} with a pyrite structure were observed in XRD 2{theta}-{omega} scan patterns of the O-face of single crystal ZnO (0001) substrates with H{sub 2}O{sub 2} treatment, but these peaks were not observed in patterns of the Zn-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. XRD {omega} scan patterns of the ZnO (0002) plane of the O-face of single crystal ZnO (0001) substrates were broadened at the tail of the pattern by H{sub 2}O{sub 2} treatment, but such broadening was not observed in that plane of the Zn-face. Grain structure of ZnO{sub 2} layers was clearly observed in atomic force microscopy (AFM) images for the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. Spectra of X-ray photoelectron spectroscopy (XPS) of the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment showed a definite peak shift of the O 1s peak. It is thought that a pyrite structure of ZnO{sub 2} is easily formed around an O atom of the O-face of ZnO (0001) substrates. Results of XRD measurements, the AFM image,more » and XPS measurement of the H{sub 2}O{sub 2}-treated single crystal ZnO (1010) substrate that has oxygen atoms on the surface appeared to be the same as those of the O-face of ZnO (0001) substrates.« less

Authors:
 [1]; ; ; ; ; ; ;  [2]
  1. Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashi-chuo, Sendai 989-3128 (Japan)
  2. Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan)
Publication Date:
OSTI Identifier:
22102305
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 113; Journal Issue: 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; HYDROGEN PEROXIDE; MICROSTRUCTURE; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SPECTRA; SUBSTRATES; SURFACES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Kashiwaba, Y., Abe, T., Nakagawa, A., Niikura, I., Kashiwaba, Y., Daibo, M., Fujiwara, T., and Osada, H. Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment. United States: N. p., 2013. Web. doi:10.1063/1.4792941.
Kashiwaba, Y., Abe, T., Nakagawa, A., Niikura, I., Kashiwaba, Y., Daibo, M., Fujiwara, T., & Osada, H. Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment. United States. doi:10.1063/1.4792941.
Kashiwaba, Y., Abe, T., Nakagawa, A., Niikura, I., Kashiwaba, Y., Daibo, M., Fujiwara, T., and Osada, H. 2013. "Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment". United States. doi:10.1063/1.4792941.
@article{osti_22102305,
title = {Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment},
author = {Kashiwaba, Y. and Abe, T. and Nakagawa, A. and Niikura, I. and Kashiwaba, Y. and Daibo, M. and Fujiwara, T. and Osada, H.},
abstractNote = {Formation of a ZnO{sub 2} layer by H{sub 2}O{sub 2} treatment for single crystal ZnO (0001) substrates was studied. X-ray diffraction (XRD) peaks of ZnO{sub 2} with a pyrite structure were observed in XRD 2{theta}-{omega} scan patterns of the O-face of single crystal ZnO (0001) substrates with H{sub 2}O{sub 2} treatment, but these peaks were not observed in patterns of the Zn-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. XRD {omega} scan patterns of the ZnO (0002) plane of the O-face of single crystal ZnO (0001) substrates were broadened at the tail of the pattern by H{sub 2}O{sub 2} treatment, but such broadening was not observed in that plane of the Zn-face. Grain structure of ZnO{sub 2} layers was clearly observed in atomic force microscopy (AFM) images for the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. Spectra of X-ray photoelectron spectroscopy (XPS) of the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment showed a definite peak shift of the O 1s peak. It is thought that a pyrite structure of ZnO{sub 2} is easily formed around an O atom of the O-face of ZnO (0001) substrates. Results of XRD measurements, the AFM image, and XPS measurement of the H{sub 2}O{sub 2}-treated single crystal ZnO (1010) substrate that has oxygen atoms on the surface appeared to be the same as those of the O-face of ZnO (0001) substrates.},
doi = {10.1063/1.4792941},
journal = {Journal of Applied Physics},
number = 11,
volume = 113,
place = {United States},
year = 2013,
month = 3
}
  • An Auger variant of the x-ray--absorption fine-structure (EXAFS) technique has been successfully applied to study the adsorption site and adsorbate-substrate bond length in a single-crystal system. The surface-EXAFS technique should have widespread applications in surface crystallographic studies.
  • Surface-aligned photo-oxidation of CO with O{sub 2} was demonstrated on two stepped surfaces, Pt(335) and Pt(779). UV light photolysis of O{sub 2}, localized exclusively on step sites, generates reactive oxygen atoms which oxidize preferentially the step-site CO. This effect was observed by monitoring labeled-CO consumption from step and terrace sites by reflection-absorption infrared spectroscopy, and also by monitoring labeled-CO{sub 2} desorbed in the gas phase from step and terrace sites by mass spectrometry. Photo-oxidation of step-CO was found to be about 2 times more efficient than photo-oxidation of terrace-CO, irrespective of the surface step density. This effect was attributed tomore » the initial alignment of the O{sub 2} intramolecular axis on stepped Pt surfaces, parallel to the step edge. (c) 2000 American Institute of Physics.« less
  • Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less
  • The reduction of oxygen and hydrogen peroxide on the Au(100) surface has been studied using classical electroanalytic methods combined with in situ X-ray scattering techniques in order to relate surface structure to the kinetics. Confirming previous results, the 4e[sup [minus]] reduction pathway for O[sub 2] at low overpotentials gives way to a 2e[sup [minus]] path at higher overpotentials. It was determined that, contrary to previous speculation, the (1 [times] 1) [yields] hex' reconstruction transition is not the dominant mechanism for this change in reaction pathway since the transition in reduction kinetics occurs in a much narrower potential range than themore » (1 [times] 1) [yields] hex' transition. The time constants for the two transitions differ by approximately 2 orders of magnitude, with the structural transition the slower. We suggest that the change in reaction pathway is related to the potential dependence of the adsorption of hydroxyl anions that catalyze the reduction of peroxide. 15 refs., 2 figs.« less
  • Derivatives of 1,4-naphthoquinone, 2-chloro-3-((2-(dimethylpropylammonio)ethyl)amino)-1,4-naphthoquinone bromide, Ia, and 2-chloro-3-((2-(dimethyl(3-(trimethoxysilyl)propyl)ammonio)ethyl)amino)-1,4-naphthoquinone bromide, Ib, have been synthesized and used as solution and surface-bound catalysts, respectively, for the electrochemical and photoelectrochemical reduction of O/sub 2/ to H/sub 2/O/sub 2/. The surface derivatizing reagent Ib having the -Si(OCH/sub 3/)/sub 3/ functionality can be used to functionalize a variety of surfaces including electrode materials and high surface area oxides. The surface reagent, (Q/QH/sub 2/)/sub surf/, has the same E/sup 0/' as Ia in solution, approx. -0.4 V vs. SCE at pH 7. The (QH/sub 2/)/sub surf/ reacts with O/sub 2/ in aqueous electrolyte at pH 7 withmore » a rate constant > 10/sup 5/ M/sup -1/s/sup -1/ to form H/sub 2/O/sub 2/ and (Q)/sub surf/. High surface area oxides functionalized with Ib yield (M/sub x/O/sub y/)-(Q) that can be electrochemically reduced to (M/sub x/O/sub y/)-(QH/sub 2/) via mediation by a low concentration of Ia in solution. The (M/sub x/O/sub y/)-(QH/sub 2/) can be isolated from the electrolyte solution by filtration and reacted with O/sub 2//H/sub 2/O to yield up to 0.1 M H/sub 2/O/sub 2/ in H/sub 2/O free of electrolyte. Study of the reduction of Ia at rotating-W-disk electrodes derivatized with Ib shows that the redox equilibration of the solution quinone and surface quinone is rapid. Reduction of (Q)/sub surf/ or Ia at visible light illuminated p-WS/sub 2/ can be effected at an electrode potential approx. 0.8 V more positive than at a metallic electode. The overall energetics are such that light can be used to effect the uphill formation of H/sub 2/O/sub 2/ via the quinone-mediated reduction of O/sub 2/. The onset of O/sub 2/ reduction is up to 0.6 V more positive than E/sup 0/'(O/sub 2//H/sub 2/O/sub 2/). The sustained photoassisted reduction of O/sub 2/ to H/sub 2/O/sub 2/ has been demonstrated. 15 references, 8 figures, 2 tables.« less