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Title: Formation of a ZnO{sub 2} layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4792941· OSTI ID:22102305
 [1]; ; ; ; ; ; ;  [2]
  1. Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashi-chuo, Sendai 989-3128 (Japan)
  2. Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan)

Formation of a ZnO{sub 2} layer by H{sub 2}O{sub 2} treatment for single crystal ZnO (0001) substrates was studied. X-ray diffraction (XRD) peaks of ZnO{sub 2} with a pyrite structure were observed in XRD 2{theta}-{omega} scan patterns of the O-face of single crystal ZnO (0001) substrates with H{sub 2}O{sub 2} treatment, but these peaks were not observed in patterns of the Zn-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. XRD {omega} scan patterns of the ZnO (0002) plane of the O-face of single crystal ZnO (0001) substrates were broadened at the tail of the pattern by H{sub 2}O{sub 2} treatment, but such broadening was not observed in that plane of the Zn-face. Grain structure of ZnO{sub 2} layers was clearly observed in atomic force microscopy (AFM) images for the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment. Spectra of X-ray photoelectron spectroscopy (XPS) of the O-face of ZnO (0001) substrates with H{sub 2}O{sub 2} treatment showed a definite peak shift of the O 1s peak. It is thought that a pyrite structure of ZnO{sub 2} is easily formed around an O atom of the O-face of ZnO (0001) substrates. Results of XRD measurements, the AFM image, and XPS measurement of the H{sub 2}O{sub 2}-treated single crystal ZnO (1010) substrate that has oxygen atoms on the surface appeared to be the same as those of the O-face of ZnO (0001) substrates.

OSTI ID:
22102305
Journal Information:
Journal of Applied Physics, Vol. 113, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English