Electrical transport in hydrogen-aluminium Co-doped ZnO and Zn{sub 1-x}Mg{sub x}O films: Relation to film structure and composition

Journal Article · Thu Feb 07 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4790314· OSTI ID:22102257

Bikowski, A.; Ellmer, K. ^[1]

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1. Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

ZnO:Al and Zn{sub 1-x}Mg{sub x}O:Al films have been deposited in Ar/H{sub 2} atmospheres by magnetron sputtering from oxidic targets at two substrate temperatures: room temperature and 300 Degree-Sign C. The electrical transport parameters-carrier concentration, resistivity, and Hall mobility-have been measured and related to the structural properties and the chemical composition. The resistivity {rho} both of ZnO:Al as well as Zn{sub 1-x}Mg{sub x}O:Al films decreases with increasing hydrogen flow for the films deposited at room temperature. The decrease is up to 2 orders of magnitude and in both cases due to an increase of the electron concentration and the Hall mobility and occurred despite the fact, that the films became almost X-ray amorphous with increasing hydrogen content. In contrast to these results, for depositions at 300 Degree-Sign C, the resistivity increases with increasing hydrogen portion in the sputtering atmosphere, more strongly for the Zn{sub 1-x}Mg{sub x}O:Al films (3 orders of magnitude). Based on literature data, it is concluded that the built-in atomic hydrogen acts as a shallow donor at low deposition temperatures, while it becomes deactivated at T{sub sub}= 300 Degree-Sign C by the formation of molecular H{sub 2}.

• OSTI ID: 22102257
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM ADDITIONS
ATMOSPHERES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
ELECTRONS
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MAGNETRONS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X RADIATION
X-RAY DIFFRACTION
ZINC COMPLEXES
ZINC OXIDES